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    首頁(yè)產(chǎn)品索引DN3135

    DN3135

    購(gòu)買收藏
    MOSFET, DEPLETION-MODE, 350V, 35 Ohm

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    電路圖、引腳圖和封裝圖

    在線購(gòu)買

    型號(hào)制造商描述購(gòu)買
    DN3135N8-G-- 立即購(gòu)買
    DN3135K1-G-- 立即購(gòu)買

    技術(shù)資料

    標(biāo)題類型大?。↘B)下載
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