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    首頁產(chǎn)品索引FFSP05120A

    FFSP05120A

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    ?SiC Diode, 1200V, 5A, TO-220-2

    制造商:ON

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

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    技術(shù)資料

    標(biāo)題類型大?。↘B)下載
    TO-220-2LDPDF32 點(diǎn)擊下載
    PSPICERAR16 點(diǎn)擊下載
    LTspiceRAR80 點(diǎn)擊下載
    SIMetrix SPICERAR23 點(diǎn)擊下載
    FFSP05120A-D.pdfPDF620 點(diǎn)擊下載

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